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| Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) 3.0V @VGE = 15V, I C = 12A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 23 12 92 92 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.50 -- 2.0 (0.07) Max. 1.2 -- 80 -- Units C/W g (oz) Revision 0 C-657 To Order Previous Datasheet Index Next Data Sheet IRGBC30U Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.63 -- V/C VGE = 0V, I C = 1.0mA -- 2.2 3.0 IC = 12A V GE = 15V -- 2.7 -- V IC = 23A See Fig. 2, 5 -- 2.4 -- IC = 12A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 3.1 8.6 -- S VCE = 100V, I C = 12A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 29 36 IC = 12A 4.8 6.8 nC VCC = 400V See Fig. 8 12 17 VGE = 15V 24 -- TJ = 25C 15 -- ns IC = 12A, V CC = 480V 92 200 VGE = 15V, R G = 23 93 190 Energy losses include "tail" 0.18 -- 0.35 -- mJ See Fig. 9, 10, 11, 14 0.53 1.0 24 -- TJ = 150C, 15 -- ns IC = 12A, V CC = 480V 160 -- VGE = 15V, R G = 23 200 -- Energy losses include "tail" 0.9 -- mJ See Fig. 10, 14 7.5 -- nH Measured 5mm from package 660 -- VGE = 0V 100 -- pF VCC = 30V See Fig. 7 11 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 23, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-658 To Order Previous Datasheet Index Next Data Sheet IRGBC30U 30 For b oth : Triangula r w ave: LO A D C U R R E N T (A ) 20 S quare w ave: 60% of rated voltage D uty c y cle: 50% TJ = 125C T sink = 90 C G ate driv e as spe c ified P ow e r Diss ipa tion = 2 1W C lamp voltage: 80% of rated 10 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 1000 I C , Collector-to-E m itter C urrent (A) IC , C ollector-to-E mitter C urrent (A ) 100 100 TJ = 2 5C TJ = 15 0 C 10 TJ = 1 50 C 10 TJ = 2 5C 1 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 0.1 5 10 V C C = 1 00 V 5 s P UL S E W IDTH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-659 To Order Previous Datasheet Index Next Data Sheet IRGBC30U 25 V G E = 1 5V 4.0 V G E = 15 V 8 0 s P U LS E W IDTH V C E , C o llec to r-to-E m itter V oltage (V ) M aximum D C Collector Current (A ) 3.5 20 I C = 2 4A 3.0 15 2.5 10 I C = 1 2A 2.0 5 I C = 6.0 A 1.5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) T C , C a s e Te m p e ra ture (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 PD M 0.1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t 1 t 2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.00 1 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-660 To Order Previous Datasheet Index Next Data Sheet IRGBC30U 14 0 0 C, C apacitance (pF) 10 0 0 Cies 800 Coes 600 V G E , G ate-to-E m itter V oltag e (V ) 100 12 0 0 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0V I C = 12 A 16 12 8 400 Cres 200 4 0 1 10 0 0 5 10 15 20 25 30 V C E , C o llector-to-Em itter V oltage (V) Q g , T o tal G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 .6 6 To ta l S w itching L osses (m J) 0 .6 4 To ta l S w itc hing Lo sse s (m J) VC C VG E TC IC = 4 80 V = 15 V = 25 C = 1 2A 10 R G = 23 V GE = 1 5V V CC = 48 0V I C = 2 4A 0 .6 2 0 .6 0 I C = 12A 1 I C = 6.0A 0 .5 8 0 .5 6 0 .5 4 0 10 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 R G , G ate R es istance ( ) W TC , C a se T e m p e ra tu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-661 To Order Previous Datasheet Index Next Data Sheet IRGBC30U 3.0 T o ta l S w itc hin g L o s s e s (m J ) 2.5 I C , C o llec to r-to-E m itter C urre nt (A ) RG TC VCC VGE = 23 = 1 50C = 48 0V = 1 5V 1000 VG E E 20 V G= T J = 125 C 100 2.0 S A FE O P E RA TIN G A RE A 10 1.5 1.0 1 0.5 0.0 5 10 15 20 25 0.1 1 10 100 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12 C-662 To Order |
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